2SK3112 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3112
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3112 is N-channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
and designed for high voltage applications such as DC/DC
converter, actuator driver.
FEATURES
• Gate voltage rating ±30 V
• Low on-state resistance
RDS(on) = 110 mΩ MAX. (VGS = 10 V, ID = 13 A)
• Low input capacitance
Ciss = 1600 pF TYP. (VDS = 10 V, VGS = 0 V)
• Avalanche capability rated
• Built-in gate protection diode
• Surface mount device available
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3112
TO-220AB
2SK3112-S
TO-262
2SK3112-ZJ
TO-263(MP-25ZJ)
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS
200
V
Gate to Source Voltage (VDS = 0 V) VGSS
±30
V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ^Note1
ID(DC)
ID(pulse)
±25
A
±75
A
Total Power Dissipation (TC = 25°C) PT1
100
W
Total Power Dissipation (TA = 25°C) PT2
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
Single Avalanche Current ^Note2
IAS
Single Avalanche Energy ^Note2
EAS
−55 to +150 °C
25
A
250
mJ
(TO-262)
(TO-263)
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 100 V, RG = 25 Ω, VGS = 20 V→0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13335EJ1V0DS00 (1st edition)
Date Published May 2001 NS CP (K)
Printed in Japan
©
1998,2001