2SK3110 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3110
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3110 is N channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
and designed for high voltage applications such as DC/DC
converter, actuator driver.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3110
Isolated TO-220
FEATURES
•Gate voltage rating ±30 V
•Low on-state resistance
RDS(on) = 180 mΩ MAX. (VGS = 10 V, ID = 7.0 A)
•Low input capacitance
Ciss = 1000 pF TYP. (VDS = 10 V, VGS = 0 V)
•Built-in gate protection diode
•Avalanche capability rated
•Isolated TO-220 package
ABSOLUTE MAXIMUM RATING (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
VDSS
VGSS
200
V
±30
V
Drain Current(DC) (TC = 25°C)
Drain Current(pulse) ^Note1
ID(DC)
ID(pulse)
±14
A
±42
A
Total Power Dissipation (TA = 25°C) PT1
2.0
W
Total Power Dissipation (TC = 25°C) PT2
35
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
−55 to +150 °C
Single Avalanche Current ^Note2
IAS
14
A
Single Avalanche Energy ^Note2
EAS
98
mJ
Note1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Starting Tch = 25°C, VDD = 100 V, RG = 25 Ω , VGS = 20 V→0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13333EJ1V0DS00 (1st edition)
Date Published January 2000 NS CP (K)
The mark 5 shows major revised points.
©
Printed in Japan
1998,1999, 2000