2SK3109 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3109
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3109 is N channel MOS FET device that
features a low on-state resistance and excellent
switching characteristics, and designed for high voltage
applications such as DC/DC converter.
FEATURES
• Gate voltage rating ±30 V
• Low on-state resistance
RDS(on) = 0.4 Ω MAX. (VGS = 10 V, ID = 5.0 A)
• Low input capacitance
Ciss = 400 pF TYP. (VDS = 10 V, VGS = 0 V)
• Avalanche capability rated
• Built-in gate protection diode
• Surface mount device available
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3109
2SK3109-S
2SK3109-ZJ
TO-220AB
TO-262
TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to source voltage (VGS = 0 V) VDSS
200
V
Gate to source voltage (VDS = 0 V) VGSS
±30
V
Drain current (DC) (TC = 25 °C)
Drain current (pulse) ^Note1
ID(DC)
ID(pulse)
±10
A
±30
A
Total power dissipation (TA = 25 °C) PT1
1.5
W
Total power dissipation (TC = 25 °C) PT2
50
W
Channel temperature
Tch
150
°C
Storage temperature
Single avalanche current ^Note2
Single avalanche energy ^Note2
Tstg
−55 to +150 °C
IAS
10
A
EAS
35
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Starting Tch = 25 °C, VDD = 100 V, RG = 25 Ω, VGS = 20 V→0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13332EJ1V0DS00 (1st edition)
The mark 5 shows major revised points.
©
Date Published January 2000 NS CP (K)
Printed in Japan
1998, 2000