2SK3107 Datasheet, PDF (1/8 Pages) NEC – N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3107
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DESCRIPTION
The 2SK3107 is a switching device which can be driven directly by a
2.5-V power source.
The 2SK3107 has excellent switching characteristics, and is suitable for
use as a high-speed switching device in digital circuits.
FEATURES
• Can be driven by a 2.5-V power source
• Low gate cut-off voltage
ORDERING INFORMATION
PART NUMBER
2SK3107
PACKAGE
SC-75(USM)
PACKAGE DRAWING (Unit : mm)
0.3 ± 0.05
0.1^{+–00..015}
D
G
S
0.2
+0.1
–0
0.5 0.5
1.0
1.6 ± 0.1
0 to 0.1
0.6
0.75 ± 0.05
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
30
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
Drain Current (pulse) ^Note1
5 Total Power Dissipation ^Note2
ID(DC)
ID(pulse)
PT
±0.1
±0.4
200
A
A
mW
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Mounted on ceramic substrate of 3.0 cm² x 0.64 mm
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Marking: D1
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13802EJ2V0DS00 (2nd edition)
The mark 5 shows major revised points.
©
Date Published August 1999 NS CP(K)
Printed in Japan
1999