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2SK3061 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |||
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3061
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for high current switching application.
FEATURES
⢠Low on-state resistance
RDS(on)1 = 8.5 m⦠MAX. (VGS = 10 V, ID = 35 A)
RDS(on)2 = 12 m⦠MAX. (VGS = 4.0 V, ID = 35 A)
⢠Low Ciss: Ciss = 5200 pF TYP.
⢠Built-in gate protection diode
⢠Isolated TO-220 package
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3061
Isolated TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS(AC)
±20
V
Gate to Source Voltage
VGSS(DC)
+20, â10
V
Drain Current (DC)
Drain Current (pulse) Note1
ID(DC)
±70
A
ID(pulse)
±280
A
Total Power Dissipation (TC = 25°C)
PT
35
W
Total Power Dissipation (TA = 25°C)
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
â55 to +150 °C
IAS
35
A
EAS
122.5
mJ
Notes 1. PW ⤠10 µs, Duty Cycle ⤠1 %
2. Starting Tch = 25 °C, RG = 25 â¦, VGS = 20 Vâ0 V
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
3.57
°C/W
62.5
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13100EJ1V0DS00 (1st edition)
©
Date Published March 1999 NS CP(K)
Printed in Japan
1998,1999
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