2SK3060 Datasheet, PDF (1/8 Pages) NEC – MOS FIELD EFFECT TRANSISTOR

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3060
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3060 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Low on-state resistance
RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 35 A)
RDS(on)2 = 20 mΩ MAX. (VGS = 4.0 V, ID = 35 A)
• Low Ciss: Ciss = 2400 pF TYP.
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3060
TO-220AB
2SK3060-S
TO-262
2SK3060-ZJ
2SK3060-Z
TO-263
TO-220SMD^Note
Note This package is produced only in Japan.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS(AC)
±20
V
Gate to Source Voltage (VDS = 0 V)
VGSS(DC)
+20, −10
V
Drain Current (DC)
Drain Current (Pulse) ^Note1
ID(DC)
ID(pulse)
±70
A
±210
A
Total Power Dissipation (TC = 25°C)
PT
70
W
Total Power Dissipation (TA = 25°C)
PT
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Single Avalanche Current ^Note2
Single Avalanche Energy ^Note2
Tstg
–55 to +150 °C
IAS
35
A
EAS
122.5
mJ
(TO-220AB)
(TO-262)
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%
5
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 V → 0 V
(TO-263, TO-220SMD)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13099EJ3V0DS00 (3rd edition)
Date Published April 2001 NS CP(K)
The mark 5 shows major revised points.
©
Printed in Japan
1997,2000