2SK3058 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3058
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Super Low On-State Resistance
RDS(on)1 = 17 mΩ MAX. (VGS = 10 V, ID = 28 A)
RDS(on)2 = 27 mΩ MAX. (VGS = 4.0 V, ID = 28 A)
• Low Ciss : Ciss = 2100 pF (TYP.)
• Built-in Gate Protection Diode
ORDERING INFORMATION
PART NUMBER
2SK3058
2SK3058-S
2SK3058-ZJ
PACKAGE
TO-220AB
TO-262
TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0)
VDSS
60
V
Gate to Source Voltage (VDS = 0)
VGSS(AC)
±20
V
Gate to Source Voltage (VDS = 0)
VGSS(DC)
+20, –10
V
Drain Current (DC)
Drain Current (Pulse) ^Note1
ID(DC)
ID(pulse)
±55
A
±165
A
Total Power Dissipation (TC = 25°C)
PT
58
W
Total Power Dissipation (TA = 25°C)
PT
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Single Avalanche Current ^Note2
Single Avalanche Energy ^Note2
Tstg
–55 to + 150 °C
IAS
27.5
A
EAS
75.6
mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
2.16
°C/W
83.3
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13097EJ1V0DS00 (1st edition)
Date Published April 1999 NS CP(K)
©
Printed in Japan
1998, 1999