2SK3057 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3057
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for high current switching application.
FEATURES
• Low on-state resistance
RDS(on)1 = 17 mΩ MAX. (VGS = 10 V, ID = 23 A)
RDS(on)2 = 27 mΩ MAX. (VGS = 4 V, ID = 23 A)
• Low Ciss: Ciss = 2100 pF TYP.
• Built-in gate protection diode
• Isolated TO-220 package
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3057
Isolated TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS(AC)
±20
V
Gate to Source Voltage
VGSS(DC)
+20, –10
V
Drain Current (DC)
Drain Current (pulse) ^Note1
ID(DC)
±45
A
ID(pulse)
±150
A
Total Power Dissipation (Tc = 25°C)
PT
30
W
Total Power Dissipation (Ta = 25°C)
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Single Avalanche Current ^Note2
Single Avalanche Energy ^Note2
Tstg
–55 to +150 °C
IAS
22.5
A
EAS
50.6
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V→0
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
Rth(ch-c)
Rth(ch-a)
4.17
°C/W
62.5
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13096EJ1V0DS00 (1st edition)
Date Published March 1999 NS CP(K)
©
Printed in Japan
1998