2SK3054 Datasheet, PDF (1/8 Pages) NEC – N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3054
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The 2SK3054 is a switching device which can be driven
directly by a 2.5-V power source.
The 2SK3054 has excellent switching characteristics,
and is suitable for use as a high-speed switching device
in digital circuits.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3054
SC-70
FEATURES
• Can be driven by a 2.5-V power source
• Low gate cut-off voltage
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS= 0 V) VDSS
50
V
Gate to Source Voltage (VDS= 0 V)
VGSS
±7
V
Drain Current (DC)
Drain Current (pulse) ^Note
ID(DC)
±0.1
A
ID(pulse)
±0.2
A
Total Power Dissipation
PT
150
mW
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150 °C
Note PW ≤ 10 ms, Duty cycle ≤ 50 %
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14209EJ2V0DS00 (2nd edition)
The mark 5 shows major revised points.
Date Published March 2000 NS CP(K)
©
Printed in Japan
1999