2SK3053 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3053
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3053 is N-Channel MOS Field Effect Transistor
designed for high current switching applications in consumer
instruments.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3053
Isolated TO-220
FEATURES
• Low On-State Resistance
RDS(on)1 = 45 mΩ MAX. (VGS = 10 V, ID = 13 A)
RDS(on)2 = 70 mΩ MAX. (VGS = 4.0 V, ID = 13 A)
• Low Ciss : Ciss = 790 pF TYP.
• Built-in Gate Protection Diode
• Isolated TO-220 package
(Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS(AC)
±20
V
Gate to Source Voltage
VGSS(DC)
+20, −10
V
Drain Current (DC)
Drain Current (Pulse) ^Note1
ID(DC)
ID(pulse)
±25
A
±75
A
Total Power Dissipation (TC = 25°C)
PT
30
W
Total Power Dissipation (TA = 25°C)
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Single Avalanche Current ^Note2
Single Avalanche Energy ^Note2
Tstg
–55 to +150 °C
IAS
12.5
A
EAS
15.6
mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
!
2. Starting Tch = 25 °C, VDD = 30 V, RG = 25 Ω, VGS = 20 V → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D12912EJ3V0DS00 (3rd edition)
Date Published May 2001 NS CP(K)
The mark ! shows major revised points.
©
Printed in Japan
1999, 2000