2SK2981 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2981
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
• Low on-resistance
RDS(on)1 = 27 mΩ (MAX.) (VGS = 10 V, ID = 10 A)
RDS(on)2 = 40 mΩ (MAX.) (VGS = 4.5 V, ID = 10 A)
RDS(on)3 = 50 mΩ (MAX.) (VGS = 4 V, ID = 10 A)
• Low Ciss : Ciss = 860 pF (TYP.)
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK2981
TO-251
2SK2981-Z
TO-252
PACKAGE DRAWING (Unit : mm)
6.5 ±0.2
5.0 ±0.2
4
1 23
1.3 MAX.
2.3 ±0.2
0.5 ±0.1
0.6 ±0.1
2.3 2.3
0.6 ±0.1
1. Gate
2. Drain
3. Source
4. Fin (Drain)
TO-251(MP-3)
6.5 ±0.2
5.0 ±0.2
4
2.3 ±0.2
0.5 ±0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0)
VDSS
30
V
Gate to Source Voltage (VDS = 0)
VGSS
±20
V
Drain Current (DC)
Drain Current (Pulse) ^Note
ID(DC)
±20
A
ID(pulse)
±80
A
Total Power Dissipation (Tc = 25 °C)
PT
20
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg –55 to + 150 °C
Note PW ≤ 10 µs, Duty cycle ≤ 1 %
12 3
1.3 MAX.
2.3 2.3
0.9 0.8
MAX. MAX.
0.8
1. Gate
2. Drain
3. Source
4. Fin (Drain)
TO-252(MP-3Z) (SURFACE MOUNT TYPE)
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice.
Document No. D12355EJ1V0DS00 (1st edition)
Date Published December 1998 NS CP(K)
Printed in Japan
©
1998