2SK2941 Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2941
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is n-Chanel MOS Field Effect Transistor designed high
current switching application.
FEATURE
• Low On-Resistance
RDS(on)1 = 14 mΩ Typ. (VGS = 10 V, ID =18 A)
RDS(on)2 = 22 mΩ Typ. (VGS = 4 V, ID = 18 A)
• Low Ciss
Ciss = 1250 pF Typ.
• Built-in G-S Protection Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Maximum Voltages and Currents
Drain to Source Voltage
VDSS
30
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID(DC)
±35
A
Drain Current (Pulse)*
ID(Pulse)
±140
A
Maximum Power Dissipation
Total Power Dissipation (TA = 25 ˚C) PT
1.5
W
Total Power Dissipation (TC = 25 ˚C) PT
60
W
Maximum Temperature
Channel Temperature
Tch
150
˚C
Storage Temperature
Tstg –55 to + 125
˚C
* PW ≤ 10 µs, Duty Cycle ≤ 1%
PACKAGE DIMENSIONS
inmillimeters
10.6 MAX.
3.6±0.2
10.0
4.8 MAX.
1.3±0.2
4
123
1.3±0.2
0.5±0.2
0.75±0.1
2.54
2.8±0.2
2.54
1. Gate
2. Drain
3. Source
4. Fin (Drain)
JEDEC: TO-220AB
MP-25 (TO-220)
Gate
Drain
Dody
Diode
Gate Protection
Diode
Source
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device
acutally used, an addtional protection circuit is externally required if voltage exeeding the rated voltage may be applied to
this device.
The information in this document is subject to change without notice.
Document No. D11007EJ1V0DS00 (1st edition)
Date Published May 1997 N
©
1997