2SK2858 Datasheet, PDF (1/8 Pages) NEC – N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2858
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DESCRIPTION
The 2SK2858 is a switching device which can be driven directly by a
2.5-V power source.
The 2SK2858 has excellent switching characteristics, and is suitable for
use as a high-speed switching device in digital circuits.
FEATURES
• Can be driven by a 2.5-V power source
• Low gate cut-off voltage
ORDERING INFORMATION
PART NUMBER
2SK2858
PACKAGE
SC-70(SSP)
PACKAGE DRAWING (Unit : mm)
2.1 ± 0.1
1.25 ± 0.1
2
1
3
Marking
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
30
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
Drain Current (pulse) ^Note
ID(DC)
±0.1
A
ID(pulse)
±0.4
A
5 Total Power Dissipation
PT
150
mW
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg –55 to +150 °C
Note PW ≤ 10 µs, Duty Cycle ≤ 1 %
EQUIVALENT CIRCUIT
Gate
Drain
Electrode
Connection
1.Source
Internal _2.Gate
Diode _3.Drain
Gate
Protection
Diode
Source
Marking: G24
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D11706EJ2V0DS00 (2nd edition)
The mark 5 shows major revised points.
©
Date Published August 1999 NS CP(K)
Printed in Japan
1996, 1999