2SK2857 Datasheet, PDF (1/8 Pages) NEC – N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2857
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DESCRIPTION
The 2SK2857 is a switching device which can be driven directly
by a 5V power source.
The 2SK2857 features a low on-state resistance and excellent
Switching Characteristics, and is suitable for applications such as
actuator driver.
FEATURES
• Can be driven by a 5V power source.
• Low On-state resistance :
RDS(on)1 = 220 mΩ MAX. (VGS = 4 V, ID = 1.5 A)
RDS(on)2 = 150 mΩ MAX. (VGS = 10 V, ID = 2.5 A)
PACKAGE DRAWING (Unit : mm)
4.5±0.1
1.6±0.2
1 ²³
1.5±0.1
Electrode
Connection
1.Souce
2.Drain
3.Gate
0.42
0.42±0.06
±0.06
1.5
0.47
±0.06
3.0
0.41+0.03
-0.05
Marking : NX
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
Drain Current (pulse) ^Note1
Total Power Dissipation ^Note2
ID(DC)
ID(pulse)
PT
±4
A
±16
A
2
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
−55 to +150 °C
Notes1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Mounted on ceramic board of 16 cm² × 0.7 mm
EQUIVALENT CIRCUIT
Drain
Gate
Internal
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device is actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D11648EJ2V0DS00 (2nd edition)
The mark • shows major revised points.
©
Date Published March 1999 NS CP (K)
Printed in Japan
1998,1999