2SJ559 Datasheet, PDF (1/8 Pages) NEC – P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ559
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DESCRIPTION
The 2SJ559 is a switching device which can be driven directly
by a 2.5 V power source.
The 2SJ559 has excellent switching characteristics, and is
suitable for use as a high-speed switching device in digital
circuits.
PACKAGE DRAWING (Unit : mm)
0.3 ± 0.05
0.1^{+–00..015}
D
0 to 0.1
FEATURES
• Can be driven by a 2.5 V power source.
• Low gate cut-off voltage.
G
S
0.2
+0.1
–0
0.5 0.5
1.0
1.6 ± 0.1
0.6
0.75 ± 0.05
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
–30
V
Gate to Source Voltage
VGSS
# 20
V
Drain Current (DC)
Drain Current (pulse) ^Note1
Total Power Dissipation ^Note2
ID(DC)
ID(pulse)
PT
# 0.1
A
# 0.4
A
200
mW
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Mounted on ceramic substrate of 3.0cm² × 0.64 mm
EQUIVALENT CIRCUIT
Drain
Gate
Internal Diode
Gate Protect
Diode
Marking : C1
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13801EJ1V0DS00 (1st edition)
Date Published June 1999 NS CP(K)
©
Printed in Japan
1999