2SJ493 Datasheet, PDF (1/8 Pages) NEC – SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ493
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is P-Channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ493
Isolated TO-220
FEATURES
• Super low on-state resistance
RDS(on)1 = 100 mΩ (MAX.) (VGS = –10 V, ID = –8 A)
RDS(on)2 = 185 mΩ (MAX.) (VGS = –4 V, ID = –8 A)
• Low Ciss: Ciss = 1210 pF (TYP.)
• Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
–60
V
Gate to Source Voltage (VDS = 0 V)
VGSS(AC)
# 20
V
Gate to Source Voltage (VDS = 0 V) ^Note1
VGSS(DC)
–20, 0
V
Drain Current (DC)
Drain Current (pulse) ^Note2
ID(DC)
# 16
A
ID(pulse)
# 64
A
Total Power Dissipation (TC = 25°C)
PT
30
W
Total Power Dissipation (TA = 25°C)
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Single Avalanche Current ^Note3
Single Avalanche Energy ^Note3
Tstg
–55 to +150 °C
IAS
–16
A
EAS
25.6
mJ
Notes 1. f = 20 kHz, Duty Cycle ≤ 10% (+Side)
2. PW ≤ 10 µs, Duty Cycle ≤ 1 %
3. Starting Tch = 25 °C, RA = 25 Ω, VGS = –20 V ¡ 0
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
4.17
°C/W
62.5
°C/W
The information in this document is subject to change without notice.
Document No. D11265EJ3V0DS00 (3rd edition)
Date Published January 1999 NS CP(K)
Printed in Japan
©
1999