2SJ448 Datasheet, PDF (1/8 Pages) NEC – SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ448
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SJ448 is P-Channel MOS Field Effect Transistor de-
signed for high voltage switching applications.
FEATURES
• Low On-Resistance
RDS(on) = 2.0 Ω MAX. (@ VGS = –10 V, ID = –2.0 A)
• Low Ciss Ciss = 470 pF TYP.
• Built-in G-S Gate Protection Diodes
• High Avalanche Capability Ratings
• Isolated TO-220 Package
PACKAGE DIMENSIONS
(in millimeters)
10.0 ±0.3
4.5 ±0.2
3.2 ±0.2
2.7 ±0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS
–250
V
Gate to Source Voltage
VGSS
m25
V
Drain Current (DC)
ID(DC)
m4.0
A
Drain Current (pulse)*
ID(pulse)
m16
A
Total Power Dissipation (Tc = 25 ˚C) PT1
30
W
Total Power Dissipation (TA = 25 ˚C) PT2
2.0
W
Channel Temperature
Tch
150
˚C
Storage Temperature
Tstg
–55 to +150 ˚C
Single Avalanche Current**
IAS
–4.0
A
Single Avalanche Energy**
EAS
80
mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = –20 V → 0
0.7 ±0.1
2.54
1.3 ±0.2
2.5 ±0.1
1.5 ±0.2 0.65 ±0.1
2.54
1. Gate
2. Drain
3. Source
1 23
MP-45F(ISOLATED TO-220)
Drain
Gate
Body
Diode
Gate Protection
Diode
Source
Document No. D10029EJ1V0DS00
Date Published May 1995 P
Printed in Japan
©
1995