2SJ358 Datasheet, PDF (1/6 Pages) NEC – P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ358
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH
The 2SJ358 is a P-channel vertical MOS FET that can
be used as a switching element. The 2SJ358 can be
directly driven by an IC operating at 5 V.
The 2SJ358 features a low on-resistance and excellent
switching characteristics, and is suitable for applications
such as actuator driver and DC/DC converter.
FEATURES
• New-type compact package
Has advantages of packages for small signals and for
power transistors, and compensates those disadvan-
tages
• Can be directly driven by an IC operating at 5 V.
• Low on-resistance
RDS(ON) = 0.40 Ω MAX. @VGS = –4 V, ID = –1.5 A
RDS(ON) = 0.30 Ω MAX. @VGS = –10 V, ID = –1.5 A
QUALITY GRADE
Standard
Package Drawings (unit: mm)
5.7 ±0.1
2.0 ±0.2
1.5 ±0.1
1
2
3
0.5 ±0.1
0.5 ±0.1
2.1 _{0.85 ±0.1}
4.2
0.4 ±0.05
Equivalent Circuit
Drain (D)
Gate (G)
Gate Protect
Diode
Electrode Connection
1. Source
Internal 2. Drain
Diode 3. Gate
Source (S)
Marking: UA2
Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by
NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = +25 ˚C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Total Power Loss
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT
Tch
Tstg
VGS = 0
VDS = 0
Conditions
PW ≤ 10 ms
Duty Cycle ≤ 1 %
Mounted on ceramic board of 7.5 cm² × 0.7 mm
Ratings
–60
–20/+10
–/+3.0
–/+6.0
Unit
V
V
A
A
2.0
W
150
˚C
–55 to +150
˚C
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device is actually used, an additional protection circuit is externally required if a voltage exceeding the
rated voltage may be applied to this device.
Document No. TC-2491
(O.D. No. TC-8011)
Date Published October 1994 P
Printed in Japan
The information in this document is subject to change without notice.
©
1994