2SJ357 Datasheet, PDF (1/8 Pages) NEC – P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ357
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH
The 2SJ357 is a P-channel vertical MOS FET that can be
used as a switching element. The 2SJ357 can be directly
driven by an IC operating at 5 V.
The 2SJ357 features a low on-resistance and excellent
switching characteristics, and is suitable for applications
such as actuator driver and DC/DC converter.
Package Drawings (unit: mm)
5.7 ±0.1
2.0 ±0.2
1.5 ±0.1
FEATURES
• New-type compact package
Has advantages of packages for small signals and for
power transistors, and compensates those disadvan-
tages
• Can be directly driven by an IC operating at 5 V.
• Low on-resistance
RDS(ON) = 0.35 Ω MAX. @VGS = –4 V, ID = –1.5 A
RDS(ON) = 0.20 Ω MAX. @VGS = –10 V, ID = –1.5 A
QUALITY GRADE
Standard
1
2
3
0.5 ±0.1
0.5 ±0.1
2.1 _{0.85 ±0.1}
4.2
0.4 ±0.05
Equivalent Circuit
Drain (D)
Gate (G)
Gate Protect
Diode
Electrode Connection
1. Source
Internal 2. Drain
Diode 3. Gate
Source (S)
Marking: UA1
Please refer to "Quality Grades on NEC Semiconductor Devices" (Document No. C11531E) published by
NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (TA = +25 °C)
Parameter
Symbol
Conditions
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
VDSS
VGSS
ID(DC)
VGS = 0
VDS = 0
Drain Current (Pulse)
Total Power Loss
Channel Temperature
Storage Temperature
ID(pulse)
PT
Tch
Tstg
PW ≤ 10 ms
Duty Cycle ≤ 1 %
Mounted on ceramic board of 7.5 cm² × 0.7 mm
Ratings
Unit
–30
V
–20/+10
V
–/+3.0
A
–/+6.0
A
2.0
W
150
°C
–55 to +150
°C
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
The information in this document is subject to change without notice.
Document No. D10803EJ3V0DS00 (3rd edition)
(Previous No. TC-2490)
Date Published January 1999 N CP(K)
Printed in Japan
©
1994