2SJ355 Datasheet, PDF (1/6 Pages) NEC – P-CHANNEL MOS FET FOR HIGH SWITCHING

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ355
P-CHANNEL MOS FET
FOR HIGH SWITCHING
The 2SJ355 is a P-channel MOS FET of a vertical type and is
a switching element that can be directly driven by the output of an
IC operating at 5 V.
This product has a low ON resistance and superb switching
characteristics and is ideal for driving the actuators and DC/DC
converters.
FEATURES
• Can be directly driven by 5-V IC
• Low ON resistance
RDS(on) = 0.60 Ω MAX. @VGS = –4 V, ID = –1.0 A
RDS(on) = 0.35 Ω MAX. @VGS = –10 V, ID = –1.0 A
PACKAGE DIMENSIONS (in mm)
4.5 ±0.1
1.6 ±0.2
1.5 ±0.1
D
S
G
0.42
±0.06
1.5 ^0.47
±0.06
3.0
0.42
±0.06
0.41
+0.03
–0.05
EQUIVALENT CIRCUIT
Drain (D)
Gate (G)
Internal
diode
PIN CONNECTIONS
S: Source
D: Drain
G: Gate
Gate
protection
diode
Source (S)
Marking: PQ
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
SYMBOL
VDSS
VGSS
ID(DC)
ID(pulse)
PT
Tch
Tstg
VGS = 0
VDS = 0
TEST CONDITIONS
PW ≤ 10 ms
Duty cycle ≤ 1 %
16 cm² × 0.7 mm, ceramic substrate used
RATING
–30
–20/+10
±2.0
±4.0
2.0
150
–55 to +150
UNIT
V
V
A
A
W
˚C
˚C
The internal diode connected between the gate and source of this product is to protect the product from static
electricity. If the product is used in a circuit where the rated voltage of the product may be exceeded, connect
a protection circuit.
Take adequate preventive measures against static electricity when handling this product.
The information in this document is subject to change without notice.
Document No. D11217EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
1996