2SD596A Datasheet, PDF (1/4 Pages) NEC – AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

DATA SHEET
SILICON TRANSISTOR
2SD596A
AUDIO FREQUENCY POWER AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
FEATURES
• Complementary to NEC 2SB624 PNP Transistor.
• High DC Current Gain: hFE = 200 TYP. (VCE = 1.0 V, IC = 100 mA)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage
VCBO
30
V
Collector to Emitter Voltage
VCEO
25
V
Emitter to Base Voltage
VEBO
5.0
V
Collector Current (DC)
IC
700
mA
Total Power Dissipation
Junction Temperature
Storage Temperature Range
PT
200
mW
Tj
150
°C
Tstg −55 to +150 °C
PACKAGE DRAWING
(Unit: mm)
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector Saturation Voltage
Base to Emitter Voltage
Gain Bandwidth Product
Output Capacitance
SYMBOL
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE
fT
Cob
MIN.
110
50
600
Note Pulsed: PW ≤ 350 μs, Duty Cycle ≤ 2%
TYP.
200
0.22
640
170
12
MAX.
100
100
400
0.6
700
hFE1 CLASSIFICATION
Marking
hFE
DV1
110 to 180
DV2
135 to 220
DV3
170 to 270
DV4
200 to 320
1. Emitter
2. Base
3. Collector
UNIT
nA
nA
V
mV
MHz
pF
TEST CONDITIONS
VCB = 30 V, IE = 0 A
VEB = 5.0 V, IC = 0 A
VCE = 1.0 V, IC = 100 mA ^Note
VCE = 1.0 V, IC = 700 mA ^Note
IC = 700 mA, IB = 70 mA ^Note
VCE = 6.0 V, IC = 10 mA ^Note
VCE = 6.0 V, IE = −10 mA
VCB = 6.0 V, IE = 0 A, f = 1.0 MHz
DV5
250 to 400
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
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Document No. D17880EJ1V0DS00 (1st edition)
c
Date Published December 2005 NS CP(K)
Printed in Japan
2005