2SD560 Datasheet, PDF (1/6 Pages) Fujitsu Component Limited. – SILICON NPN EPITAXIAL DARLINGTON TRANSISTOR (5 AMP, 100 VOLT)

DATA SHEET
SILICON POWER TRANSISTOR
2SD560
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SD560 is a mold power transistor developed for low-
frequency power amplifiers and low-speed switching. This transistor is
ideal for direct driving from the IC output of devices such as pulse
motor drivers and relay drivers, and PC terminals.
FEATURES
• C-to-E reverse diode inserted
• Low collector saturation voltage
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)
IB(DC)
PT
Tj
Tstg
Conditions
PW ≤ 10 ms,
duty cycle ≤ 50%
TC = 25°C
TA = 25°C
Ratings Unit
150
V
100
V
7.0
V
±5.0
A
±8.0
A
0.5
A
30
W
1.5
W
150
°C
−55 to +150 °C
ORDERING INFORMATION
Ordering Name
2SD560
Package
TO-220AB
(TO-220AB)
INTERNAL EQUIVALENT CIRCUIT
1. Base
2. Collector
3. Emitter
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14863EJ3V0DS00 (3rd edition)
Date Published April 2002 N CP(K)
©
Printed in Japan
21090928