2SD2403 Datasheet, PDF (1/6 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

DATA SHEET
SILICON TRANSISTOR
2SD2403
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
The 2SD2403 is a transistor featuring high current
capacitance in small dimension. This transistor is ideal for
DC/DC converters and motor drivers.
FEATURES
• High current capacitance
• Low collector saturation voltage
• Complementary transistor with 2SB1572
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Base current (pulse)
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)
IB(DC)
IB(pulse)
PT
Tj
Tstg
Conditions
PW ≤ 10 ms
duty cycle ≤ 50 %
PW ≤ 10 ms
duty cycle ≤ 50 %
16 cm² × 0.7 mm ceramic board mounted
Ratings
Unit
80
V
60
V
6.0
V
3.0
A
5.0
A
0.2
A
0.4
A
2.0
W
150
°C
−55 to +150
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16156EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
©
Printed in Japan
21090928