2SD2383 Datasheet, PDF (1/4 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE SWITCHING

DATA SHEET
SILICON TRANSISTOR
2SD2383
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-VOLTAGE SWITCHING
DESCRIPTION
The 2SD2383 is an element realizing high voltage in small
dimension. This transistor is ideal for downsizing sets
requiring high voltage.
FEATURES
• High voltage
• Small dimension
ORDERING INFORMATION
PART NUMBER
2SD2383
Marking: N1
PACKAGE
SC-59
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage
VCBO
400
V
Collector to Emitter Voltage VCEO
300
V
Emitter to Base Voltage
VEBO
5.0
V
Collector Current (DC)
IC(DC)
20
mA
Total Power Dissipation
PT
200
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg −55 to +150 °C
PACKAGE DRAWING (Unit: mm)
2.8 ±0.2
1.5
0.65
+0.1
–0.15
2
3
1
Marking
1. Emitter
2. Base
3. Collector
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16154EJ2V0DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
The mark shows major revised points.
2002