2SD2230 Datasheet, PDF (1/6 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS

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The 2SD2230 is an element realizing ultra low VCE(sat). This
transistor is ideal for muting such as stereo recorders, VCRs,
and TVs.
FEATURES
• Low VCE(sat):
VCE(sat)1 = 33 mV TYP. @IC = 100 mA, IB = 10 mA
VCE(sat)2 = 150 mV TYP. @IC = 500 mA, IB = 20 mA
• High hFE and high current
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor
Devices” (Document No. C11531E) published by NEC
Corporation to know the specification of quality grade on the
devices and its recommended applications.
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
16
V
Collector to emitter voltage VCEO
16
V
Emitter to base voltage
VEBO
5
V
Collector current (DC)
ID(DC)
500
mA
Total power dissipation
PT
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Electrode connection
1. Emitter (E)
2. Base (B)
3. Collector (C)
Marking: D46
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
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