2SD2164 Datasheet, PDF (1/6 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

DATA SHEET
SILICON POWER TRANSISTOR
2SD2164
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SD2164 is a single power transistor developed especially
for high hFE. This transistor is ideal for simplifying drive circuits and
reducing power dissipation because its hFE is as high as that of
Darlington transistors, but it is a single transistor.
In addition, this transistor features a small resin insulated
package, thus contributing to high-density mounting and mounting
cost reduction.
FEATURES
• High hFE and low VCE(sat):
hFE ≅ 1,300 TYP. (VCE = 5.0 V, IC = 0.5 A)
VCE(SAT) ≅ 0.3 V TYP. (IC = 2.0 A, IB = 20 mA)
• Full mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
Collector current (pulse)
IC(DC)
IC(pulse)
3.0
A
5.0^Note
A
Base current (DC)
IB(DC)
0.5
A
Total power dissipation
PT (TC = 25°C)
20
W
Total power dissipation
PT (TA = 25°C)
2.0
W
Junction temperature
Storage temperature
Tj
150
°C
Tstg
−55 to +150
°C
Note PW ≤ 300 µs, duty cycle ≤ 10%
PACKAGE DRAWING (UNIT: mm)
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confirm that this is the latest version.
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availability and additional information.
Document No. D15606EJ3V0DS00 (3rd edition)
Date Published April 2002 N CP(K)
©
Printed in Japan
21090928