2SD2163 Datasheet, PDF (1/4 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED HIGH-CURRENT SWITCHING

DATA SHEET
DARLINGTON POWER TRANSISTOR
2SD2163
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND
LOW-SPEED HIGH-CURRENT SWITCHING
The 2SD2163 is a mold power transistor developed for low-
speed high-current switching. This transistor is ideal for direct
driving from the IC output of devices such as pulse motor drivers
and relay drivers of PC terminals.
FEATURES
• Mold package that does not require an insulating board or
insulation bushing
• High DC current gain due to Darlington connection
hFE = 1,000 MIN. (@IC = 10 A)
• Low collector saturation voltage:
VCE(sat) = 1.5 V MAX. (@IC = 10 A)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
150
V
Collector to emitter voltage
VCEO
100
V
Emitter to base voltage
VEBO
8.0
V
Collector current (DC)
IC(DC)
±10
A
Collector current (pulse)
IC(pulse)*
±20
A
Base current (DC)
IB(DC)
1.0
A
Total power dissipation
PT (Tc = 25°C)
30
W
Total power dissipation
PT (Ta = 25°C)
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
* PW ≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
ICBO
VCB = 100 V, IE = 0
DC current gain
hFE** VCE = 2.0 V, IC = 10 A
Collector saturation voltage VCE(sat)** IC = 10 A, IB = 25 mA
Base saturation voltage
VBE(sat)** IC = 10 A, IB = 25 mA
Turn-on time
Storage time
Fall time
ton
IC = 10 A, IB1 = −IB2 = 25 mA
tstg
RL = 5.0 Ω, VCC ≅ 50 V
tf
Refer to the test circuit.
** Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
MIN.
TYP.
MAX.
Unit
10
µA
1,000 6,000 30,000
1.1
1.5
V
1.8
2.0
V
1.0
µs
5.0
µs
2.0
µs
hFE CLASSIFICATION
Marking
hFE
M
1,000 to 3,000
L
2,000 to 5,000
K
4,000 to 10,000
J
8,000 to 30,000
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16139EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
©
Printed in Japan
21090928