2SD1843 Datasheet, PDF (1/4 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

DATA SHEET
DARLINGTON POWER TRANSISTOR
2SD1843
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SD1843 is a Darlington connection transistor with on-chip
dumper diode in collector to emitter and zener diode in collector to
base. This transistor is ideal for use in acuator drives such as
motors, relays, and solenoids.
FEATURES
• High DC current gain due to Darlington connection
• High surge resistance due to on-chip protection elements:
C to E: Dumper diode
C to B: Zener diode
• Low collector saturation voltage
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)*
PT(Ta = 25°C)
Tj
Tstg
Ratings
Unit
60±10
V
60±10
V
7.0
V
±1.0
A
±2.0
A
1.0
W
150
°C
−55 to +150
°C
* PW ≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
ICBO
IEBO
hFE2**
hFE2**
VCB = 40 V, IE = 0
VEB = 5.0 V, IC = 0
VCE = 2.0 V, IC = 0.2 A
VCE = 2.0 V, IC = 0.5 A
Collector saturation voltage
Base saturation voltage
Turn-on time
Storage time
Fall time
VCE(sat)**
VBE(sat)**
tON
tstg
tf
IC = 0.5 A, IB = 0.5 mA
IC = 0.5 A, IB = 0.5 mA
IC = 0.5 A, RL = 100 Ω
IB1 = −IB2 = 0.1 mA, VCC = 50 V
* *Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
hFE2
2000 to 5000
4000 to 10000 8000 to 30000
MIN.
TYP.
MAX.
Unit
0.5
µA
1.0″
mA
1000
2000
30000
1.5
V
2.0
V
0.5
µs
1.0
µs
1.0
µs
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16200EJ1V0DS00
Date Published April 2002 N CP(K)
©
Printed in Japan
21090928