2SD1695 Datasheet, PDF (1/4 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

DATA SHEET
SILICON POWER TRANSISTOR
2SD1695
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SD1695 is a Darlington connection transistor and
incorporates a dumper diode between the collector and emitter and
a constant voltage diode and protection elements between the
collector and base. This transistor is ideal for drives in solenoid and
actuators.
FEATURES
• On-chip protection elements enable time and cost reduction.
C to E: Dumper diode
C to B: Constant diode
• Low collector saturation voltage
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to know
the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
31 ±4
V
Collector to emitter voltage
VCEO
31 ±4
V
Emitter to base voltage
VEBO
8.0
V
Collector current (DC)
IC(DC)
±2.0
A
Collector current (pulse)
IC(pulse)*
±3.0
A
Base current (DC)
IB(DC)
0.2
A
Total power dissipation
PT (Ta = 25°C)
1.3
W
Total power dissipation
PT (Tc = 25°C)
10
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
* PW ≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Emitter
2. Collector
3. Base
4. Collector (fin)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16138EJ1V0DS00
Date Published April 2002 N CP(K)
©
Printed in Japan
21090928