2SD1615 Datasheet, PDF (1/4 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLD

DATA SHEET
SILICON TRANSISTORS
2SD1615, 2SD1615A
NPN SILICON EPITAXIAL TRANSISTORS
POWER MINI MOLD
DESCRIPTION
2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially
in Hybrid Integrated Circuits.
FEATURES
• World Standard Miniature Package
• Low VCE (sat) VCE(sat) = 0.15 V
• Complement to 2SB1115, 2SD1115A
ABSOLUTE MAXIMUM RATINGS
Maximum Voltages and Currents (TA = 25 ˚C) 2SD1615 2SD1615A
Collector to Base Voltage
VCBO 60
120 V
Collector to Emitter Voltage
VCEO 50
60 V
Emitter to Base Voltage
VEBO
6
A
Collector Current (DC)
IC
1
A
Collector Current (Pulse)*
IC
2
A
Maximum Power Dissipation
Total Power Dissipation
at 25 ˚C Ambient Temperature** PT
2.0
W
Maximum Temperatures
Junction Temperature
Tj
150
˚C
Storage Temperature Range
Tstg –55 to +150
˚C
* PW ≤ 10 ms, Duty Cycle ≤ 50 %
** When mounted on ceramic substrate of 16 cm² × 0.7 mm
PACKAGE DIMENSIONS
in millimeters
4.5 ± 0.1
1.6 ± 0.2
1.5 ± 0.1
C
E
B
0.42
± 0.06
1.5 ^0.47
± 0.06
3.0
0.42 ± 0.06
0.41^+– _00..0053
1. Emitter
2. Collector
3. Base
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Collector Saturation Voltage
Base Saturation Voltage
Base to Emitter Voltage
Gain Bandwidth Product
Output Capacitance
SYMBOL MIN.
ICBO
IEBO
hFE1***
hFE2***
VCE(sat)***
VBE(sat)***
VBE***
fT
Cob
135
135
81
600
80
TYP.
290
270
0.15
0.9
160
19
MAX. UNIT
100 nA
100 nA
100 nA
600
400
0.3 V
1.2 V
700 mV
MHz
pF
TEST CONDITIONS
2SD1615
VCB = 60 V, IE = 0
2SD1615A VCB = 120 V, IE = 0
VEB = 6.0 V, IC = 0
2SC1615
VCE = 2.0 V, IC = 100 mA
2SD1615A
VCE = 2.0 V, IC = 1.0 A
IC = 1.0 A, IB = 50 mA
IC = 1.0 A, IB = 50 mA
VCE = 2.0 V, IC = 50 mA
VCE = 2.0 V, IE = –100 mA
VCB = 10 V, IE = 0, f = 1.0 MHz
*** Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2 %
hFE Classification
MARKING 2SD1615
2SD1615A
hFE
GM
GQ
135 to 270
GL
GP
200 to 400
GK
300 to 600
Document No. D10198EJ3V0DSD0 (3rd edition)
(Previous No. TC-5810A)
Date Published June 1995 P
Printed in Japan
©
1985