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2SD1588 Datasheet, PDF (1/4 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
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SILICON POWER TRANSISTOR
2SD1588
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
FEATURES
• Mold package that does not require an insulating board or
insulation bushing
• Large current capacity in small dimension: IC(DC) = 7 A
• Low collector saturation voltage: VCE(sat) = 0.5 V MAX. (@5 A)
• Ideal for use in ramp drivers or inductance drivers
• Complementary transistor: 2SB1097
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
100
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
Collector current (DC)
VEBO
IC(DC)
7.0
V
7.0
A
Collector current (Pulse)
IC(pulse)*
15
A
Base current (DC)
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
IB(DC)
3.5
A
PT (TC = 25°C)
30
W
PT (TA = 25°C)
2.0
W
Tj
150
°C
Tstg
−55 to +150
°C
* PW ≤ 300 µs, duty cycle ≤ 10%
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
ICBO
VCB = 80 V, IE = 0
Emitter cutoff current
IEBO
VEB = 5.0 V, IC = 0
DC current gain
hFE1** VCE = 1.0 V, IC = 3 A
DC current gain
hFE2** VCE = 1.0 V, IC = 5 A
Collector saturation voltage VCE(sat)** IC = 5 A, IB = 0.5 A
Base saturation voltage
VBE(sat)** IC = 5 A, IB = 0.5 A
** Pulse test PW ≤ 350 µs, duty cycle ≤ 2%/per pulsed
hFE CLASSIFICATION
Marking
hFE1
M
40 to 80
L
60 to 120
K
100 to 200
PACKAGE DRAWING (UNIT: mm)
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MIN.
TYP.
MAX.
Unit
10
µA
10
µA
40
200
20
0.5
V
1.5
V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13174EJ1V1DS00 (1st edition)
Date Published April 2002 N CP(K)
©
Printed in Japan
21090928