2SD1481 Datasheet, PDF (1/4 Pages) NEC – SILICON POWER TRANSISTOR

DATA SHEET
SILICON POWER TRANSISTOR
2SD1481
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
FEATURES
• On-chip C-to-B Zener diode for surge voltage absorption
• Low collector saturation voltage: VCE(SAT) = 1.5 V MAX. (at 1 A)
• Ideal for use in a direct drive from IC to the devices such as OA
and FA equipment and motor solenoid relay printer head drivers
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60 ±10
V
Collector to emitter voltage
VCEO
60 ±10
V
Emitter to base voltage
VEBO
7.0
V
Collector current
IC(DC)
2.0
A
Collector current
IC(pulse)*
4.0
A
Base current
IB(DC)
0.2
A
Total power dissipation
PT (Tc = 25°C)
15
W
Total power dissipation
PT (Ta = 25°C)
1.5
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
* PW ≤ 300 µs, duty cycle ≤ 10%
PACKAGE DRAWING (UNIT: mm)
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Document No. D16189EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
©
Printed in Japan
21090928