2SC5507 Datasheet, PDF (1/12 Pages) NEC – NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

PRELIMINARY DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5507
NPN SILICON RF TRANSISTOR FOR LOW CURRENT,
LOW NOISE, HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
FEATURES
• Low noise and high gain with low collector current
• NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA
• Maximum stable power gain: MSG = 22 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA
• fT = 25 GHz technology
• Flat-lead 4-pin thin super mini-mold (t = 0.59 mm)
ORDERING INFORMATION
Part Number
Quantity
2SC5507
Loose product (50 pcs)
2SC5507-T2
Taping product (3 kpcs/reel)
Packaging Style
• 8 mm wide emboss taping
• 1 pin (emitter), 2 pin (collector) feed hole direction
Remark To order evaluation samples, consult your NEC sales representative (available in 50-pcs units).
ABSOLUTE MAXIMUM RATINGS
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
P ^Note
tot
Tj
Tstg
Ratings
15
3.3
1.5
12
39
150
–65 to +150
Unit
V
V
V
mA
mW
°C
°C
Note TA = +25 °C (free air)
THERMAL RESISTANCE
Item
Junction to Case Resistance
Junction to Ambient Resistance
Symbol
Rth j-c
Rth j-a
Value
240
650
Unit
°C/W
°C/W
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice.
Document No. P13864EJ1V0DS00 (1st edition)
Date Published March 1999 N CP(K)
Printed in Japan
©
1999