2SC5436 Datasheet, PDF (1/12 Pages) NEC – NPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

PRELIMINARY DATA SHEET
SILICON TRANSISTOR
2SC5436
NPN EPITAXIAL SILICON TRANSISTOR
ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY
LOW-NOISE AMPLIFICATION
FEATURE
• Ultra super mini-mold thin flat package
(1.4 mm × 0.8 mm × 0.59 mm: TYP.)
• Contains same chip as 2SC5186
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
RATING
5
3
2
30
90
150
–65 to +150
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PACKAGE DIMENSIONS (in mm)
1.4 ± 0.05
0.8 ± 0.1
UNIT
V
V
V
mA
mW
°C
°C
2
3
1
PIN CONNECTIONS
1: Emitter
2: Base
3: Collector
PARAMETER
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Reverse Transfer Capacitance
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure (1)
Noise Figure (2)
SYMBOL
ICBO
IEBO
hFE
Cre
fT (1)
fT (2)
|S21e|² (1)
|S21e|² (2)
NF (1)
NF (2)
TEST CONDITIONS
VCB = 5 V, IE = 0
VEB = 1 V, IC = 0
VCE = 2 V, IC = 20 mA^{Note 1}
VCB = 2 V, IE = 0, f = 1 MHz^{Note 2}
VCE = 2 V, IC = 20 mA, f = 2 GHz
VCE = 1 V, IC = 10 mA, f = 2 GHz
VCE = 2 V, IC = 20 mA, f = 2 GHz
VCE = 1 V, IC = 10 mA, f = 2 GHz
VCE = 2 V, IC = 3 mA, f = 2 GHz
VCE = 1 V, IC = 3 mA, f = 2 GHz
MIN.
70
9.0
7.0
8.5
6.0
TYP.
0.4
14.0
12.0
10.0
9.0
1.4
1.4
MAX.
100
100
130
0.8
2.0
2.0
UNIT
nA
nA
pF
GHz
GHz
dB
dB
dB
dB
Notes 1. Pulse measurement PW ≤ 350 µs, duty cycle ≤ 2 %
2. Collector to base capacitance measured by capacitance meter (automatic balance bridge method) when
emitter pin is connected to the guard pin.
Because this product uses high-frequency process, avoid excessive input of static electricity, etc.
The information in this document is subject to change without notice.
Document No. P13079EJ1V0DS00 (1st edition)
Date Published February 1998 N CP(K)
Printed in Japan
©
1998