2SC5409 Datasheet, PDF (1/8 Pages) NEC – NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION

PRELIMINARY DATA SHEET
SILICON TRANSISTOR
2SC5409
NPN EPITAXIAL SILICON TRANSISTOR
FOR MICROWAVE HIGH-GAIN AMPLIFICATION
FEATURE
• High fT
16 GHz TYP.
• High gain
|S21e|² = 14 dB TYP.
@f = 2 GHz, VCE = 2 V, IC = 20 mA
• NF = 1.1 dB, @f = 2 GHz VCE = 2 V, IC = 3 mA
• 6-pin Small Mini Mold Package
PACKAGE DIMENSIONS (in mm)
2.1±0.1
1.25±0.1
ORDERING INFORMATION
PART NUMBER
QUANTITY
2SC5409-T1
3 kpcs/reel
PACKING STYLE
8-mm wide emboss taping, 6-pin
(collector) feed hole direction
Remark To order evaluation samples, consult your NEC sales person-
nel (supported in 50-pcs units).
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
RATING
5
3
2
30
90
150
–65 to +150
UNIT
V
V
V
mA
mW
°C
°C
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
Because this product uses high-frequency process, avoid excessive input of static electricity, etc.
Document No. P12096EJ1V0DS00 (1st edition)
Date Published April 1997 N
Printed in Japan
©
1997