2SC5369 Datasheet, PDF (1/12 Pages) NEC – NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION

PRELIMINARY DATA SHEET
SILICON TRANSISTOR
2SC5369
NPN EPITAXIAL SILICON TRANSISTOR FOR
MICROWAVE AMPLIFICATION
FEATURES
• High fT
14 GHz TYP.
• High gain
| S21e | ² = 14 dB TYP.
@f = 2 GHz, VCE = 3 V, IC = 10 mA
• NF = 1.3 dB, @f = 2 GHz, VCE= 3 V, IC = 3 mA
• 6-pin small mini mold package
PACKAGE DIMENSION (in mm)
2.1±0.1
1.25±0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
PT
TI
Tstg
RATING
9
6
2
30
150
150
–65 to +150
UNIT
V
V
V
mA
mW
°C
°C
PIN CONNECTIONS
1. Emitter
4. Emitter
2. Emitter
5. Emitter
3. Base
6. Collector
Document No. P11644EJ1V0DS00 (1st edition)
Date Published September 1996 P
Printed in Japan
©
1996