2SC5337 Datasheet, PDF (1/8 Pages) NEC – NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

PRELIMI^DN^AA^TR^AY ^SD^HA^ET^EA^TSHEET
Silicon Transistor
2SC5337
NPN EPITAXIAL SILICON TRANSISTOR
HIGH FREQUENCY LOW DISTORTION AMPLIFIER
DESCRIPTION
The 2SC5337 is a high-frequency transistor designed for a low distortion and low noise amplifier on the VHF to
UHF band, which is suitable for the CATV, tele-communication, and such.
FEATURES
• _{Low distortion}
IM2 = 59 dB TYP. @VCE = 10 V, IC = 50 mA
IM3 = 82 dB TYP. @VCE = 10 V, IC = 50 mA
• _{Low noise}
NF = 1.5 dB TYP. @VCE = 10 V, IC = 10 mA, f = 1 GHz
• _{New power mini-mold package version of a 4-pin type}
gain-improved on the 2SC3356
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
Rating
Unit
VCBO
30
V
VCEO
15
V
VEBO
3.0
V
IC
250
mA
PT ^Note1
2.0
W
Tj
150
°C
Tstg
–65 to +150
°C
PACKAGE DIMENSIONS
(in millimeters)
4.5±0.1
1.6±0.2
1.5±0.1
C
EB E
0.42
±0.06
0.42
±0.06
1.5 _0.46
3.0 ^±0.06
0.25±0.02
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
Note 1. 0.7 mm × 16 cm² double sided ceramic substrate (Copper plaiting)
Document No. P10939EJ1V0DS00 (1st edition)
Date Published April 1996 P
Printed in Japan
©
1996