2SC5336 Datasheet, PDF (1/6 Pages) NEC – NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

PRELIMINARY DATA SHEET
Silicon Transistor
2SC5336
NPN EPITAXIAL SILICON TRANSISTOR
HIGH FREQUENCY LOW DISTORTION AMPLIFIER
FEATURES
• _{High gain}
| S21 | ² = 12 dB TYP, @f = 1 GHz, VCE = 10 V, Ic = 20 mA
• _{New power mini-mold package version of a 4-pin type}
gain-improved on the 2SC3357
PACKAGE DIMENSIONS
(in millimeters)
4.5±0.1
1.6±0.2
1.5±0.1
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C)
C
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
VCBO
20
V
EB E
Collector to Emitter Voltage
VCEO
12
V
Emitter to Base Voltage
Collector Current
Total Power Dissipation
VEBO
3.0
V
IC
100
mA
PT^Note1
1.2
W
0.42
±0.06
0.42
±0.06
1.5 _0.46
3.0 ^±0.06
0.25±0.02
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
–65 to +150
°C
Note 1. 0.7 mm × 16 cm² double sided ceramic substrate (Copper plating)
ELECTRICAL CHARACTERISTICS (T_A = 25 °C)
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feed-back Capacitance
Insertion Power Gain
Noise Figure
Noise Figure
Symbol
ICB0
IEB0
hFE
fT
Cre
| S21e | ²
NF
NF
Test Conditions
VCB = 10 V, IE = 0
VEB = 1 V, IC = 0
VCE = 10 V, IC = 20 mA^Note2
VCE = 10 V, IC = 20 mA
VCB = 10 V, IE = 0, f = 1.0 MHz^Note3
VCE = 10 V, IC = 20 mA, f = 1.0 GHz
VCE = 10 V, IC = 7 mA, f = 1.0 GHz
VCE = 10 V, IC = 40 mA, f = 1.0 GHz
MIN.
50
TYP.
120
6.5
0.5
12.0
1.1
1.8
MAX.
1.0
1.0
250
0.8
3.0
Unit
µA
µA
GHz
pF
dB
dB
dB
Notes 2. Pulse measurement : PW ≤ 350 µS, Duty Cycle ≤ 2 %
3. Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal.
h_FE Classification
Rank
Marking
hFE
RH
RH
50 to 100
RF
RF
80 to 160
RE
RE
125 to
250
Document No. P10938EJ1V0DS00 (1st edition)
Date Published April 1996 P
Printed in Japan
©
1996