2SC5289 Datasheet, PDF (1/12 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER

DATA SHEET
SILICON TRANSISTOR
2SC5289
NPN SILICON EPITAXIAL TRANSISTOR
FOR L-BAND LOW-POWER AMPLIFIER
The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital
cordless phones (DECT, PHS, etc.).
FEATURES
• P–1 = 27 dBm TYP.
@f = 1.9 GHz, VCC = 3.6 V, ICq = 1 mA (Class AB), Duty = 1/8
• 4-Pin Mini Mold Package
EIAJ: SC-61
ORDERING INFORMATION
Part Number
Quantity
Packing Style
2SC5289-T1
3 Kpcs/Reel Embossed tape 8 mm wide.
Pin 3 (Base), Pin 4 (Emitter) face
to perforation side of the tape.
Remark If you require an evaluation sample, please contact an NEC Sales
Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
VCBO
VCEO
VEBO
IC
PT
Junction Temperature
Tj
Storage Temperature
Tstg
Note Pulse period is 10 msec or less.
Rating
9.0
6.0
2.0
300
200 (CW)
1.2 (duty = 1/8)^Note
3.0 (duty = 1/24)^Note
150
–65 to +150
Unit
V
V
V
mA
mW
W
W
˚C
˚C
PACKAGE DRAWING
(Unit: mm)
2.8^{+–00..32}
1.5^{+–00..12}
5° 5°
5° 5°
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
Document No. P10250EJ2V0DS00 (2nd edition)
Date Published December 1995 P
Printed in Japan
©
1995