2SC5288 Datasheet, PDF (1/12 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER

DATA SHEET
SILICON TRANSISTOR
2SC5288
NPN SILICON EPITAXIAL TRANSISTOR
FOR L-BAND LOW-POWER AMPLIFIER
The 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital
cordless phones (DECT, PHS, etc.).
FEATURES
• P–1 = 24 dBm TYP.
@f = 1.9 GHz, VCC = 3.6 V, ICq = 1 mA (Class AB), Duty = 1/8
• 4-Pin Mini Mold Package
EIAJ: SC-61
ORDERING INFORMATION
Part Number
Quantity
Packing Style
2SC5288-T1
3 Kpcs/Reel Embossed tape 8 mm wide.
Pin 3 (Base), Pin 4 (Emitter) face
to perforation side of the tape.
Remark If you require an evaluation sample, please contact an NEC Sales
Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Parameter
Collector to Base Voltage
Symbol
VCBO
Rating
9.0
Collector to Emitter Voltage
VCEO
6.0
Emitter to Base Voltage
VEBO
2.0
Collector Current
IC
150
Total Power Dissipation
PT
200 (CW)
1.0 (duty = 1/8)^Note
2.5 (duty = 1/24)^Note
Junction Temperature
Tj
150
Storage Temperature
Tstg
–65 to +150
Note Pulse period is 10 msec or less.
Unit
V
V
V
mA
mW
W
W
˚C
˚C
PACKAGE DRAWING
(Unit: mm)
2.8^{+–00..32}
1.5^{+–00..12}
5° 5°
5° 5°
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
Document No. P10249EJ2V0DS00 (2nd edition)
Date Published December 1995 P
Printed in Japan
©
1995