2SC5186 Datasheet, PDF (1/12 Pages) NEC – NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

DATA SHEET
SILICON TRANSISTOR
2SC5186
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
• Low Noise
NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
• Ultra Super Mini-Mold package
ORDERING INFORMATION
PART
NUMBER
2SC5186
2SC5186-T1
QUANTITY
50 units/box
3 000 units/reel
ARRANGEMENT
Embossed tape, 8 mm wide,
Pin 3 (Collector) facing the perforations.
* Contact your NEC sales representatives to order samples for
evaluation (available in batches of 50).
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage
VCBO
5
V
Collector to Emitter Voltage VCEO
3
V
Emitter to Base Voltage
VEBO
2
V
Collector Current
IC
30
mA
Total Power Dissipation
PT
90
mW
Junction Temperature
Tj
150
˚C
Storage Temperature
Tstg
–65 to +150 ˚C
PACKAGE DIMENSIONS
(Units: mm)
1.6 ± 0.1
0.8 ± 0.1
2
3
1
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
Document No. P12110EJ2V0DS00 (2nd edition)
(Previous No. TC-2483)
Date Published November 1996 N
Printed in Japan
©
1994