2SC5184 Datasheet, PDF (1/12 Pages) NEC – NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

DATA SHEET
SILICON TRANSISTOR
2SC5184
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD
PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
• Low Noise
• NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
• NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
• Super Mini-Mold package
EIAJ: SC-70
ORDERING INFORMATION
PART
NUMBER
2SC5184-T1
QUANTITY
3 000 units/reel
2SC5184-T2 3 000 units/reel
ARRANGEMENT
Embossed tape, 8 mm wide,
Pin No. 3 (collector)
facing the perforations
Embossed tape, 8 mm wide,
Pins No. 1 (emitter) and No. 2 (base)
facing the perforations
Remark: Contact your NEC sales representative to order samples for
evaluation (available in batches of 50).
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage
VCBO
5
V
Collector to Emitter Voltage VCEO
3
V
Emitter to Base Voltage
VEBO
2
V
Collector Current
IC
30
mA
Total Power Dissipation
PT
90
mW
Junction Temperature
Tj
150
˚C
Storage Temperature
Tstg
–65 to +150 ˚C
PACKAGE DIMENSIONS
(Units: mm)
2.1 ± 0.1
1.25 ± 0.1
2
1
3
Marking
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
Document No. P12108EJ2V0DS00 (2nd edition)
(Previous No. TC-2481)
Date Published November 1996 N
Printed in Japan
©
1994