2SC5183 Datasheet, PDF (1/12 Pages) NEC – NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

DATA SHEET
SILICON TRANSISTOR
2SC5183
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD
PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
• Low Noise
• NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
• NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
• 4-pin Mini-Mold package
EIAJ: SC-61
ORDERING INFORMATION
PART
NUMBER
2SC5183-T1
2SC5183-T2
QUANTITY
ARRANGEMENT
3 000 units/reel
Embossed tape, 8 mm wide,
Pin No. 3 (base) and No. 4 (emitter)
facing the perforations
Embossed tape, 8 mm wide,
Pins No. 1 (collector) and No. 2
(emitter) facing the perforations
* Contact your NEC sales representatives to order samples for
evaluation (available in batches of 50).
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage
VCBO
5
V
Collector to Emitter Voltage VCEO
3
V
Emitter to Base Voltage
VEBO
2
V
Collector Current
IC
30
mA
Total Power Dissipation
PT
90
mW
Junction Temperature
Tj
150
˚C
Storage Temperature
Tstg
–65 to +150 ˚C
PACKAGE DIMENSIONS
(Units: mm)
2.8
+0.2
–0.3
1.5
+0.2
–0.1
5˚ 5˚
5˚ 5˚
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
Document No. P12107EJ2V0DS00 (2nd edition)
(Previous No. TC-2480)
Date Published November 1996 N
Printed in Japan
©
1994