2SC5182 Datasheet, PDF (1/12 Pages) NEC – NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

DATA SHEET
SILICON TRANSISTOR
2SC5182
NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
• Low noise
• NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
• NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
• Mini-Mold package
EIAJ: SC-59
ORDERING INFORMATION
PART
NUMBER
2SC5182-T1
2SC5182-T2
QUANTITY
ARRANGEMENT
3 000 units/reel
Embossed tape, 8 mm wide,
Pin No. 3 (Collector)
facing the perforations
Embossed tape, 8 mm wide,
Pins No. 1 (Emitter) and No. 2 (Base)
facing the perforations
* Contact your NEC sales representative to order samples for evaluation
(available in batches of 50).
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage
VCBO
5
V
Collector to Emitter Voltage VCEO
3
V
Emitter to Base Voltage
VEBO
2
V
Collector Current
IC
30
mA
Total Power Dissipation
PT
90
mW
Junction Temperature
Tj
150
˚C
Storage Temperature
Tstg
–65 to +150 ˚C
PACKAGE DIMENSIONS
(Units: mm)
2.8±0.2
1.5
0.65
+0.1
–0.15
2
3
1
Marking
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
Document No. P12106EJ2V0DS00 (2nd edition)
(Previous No. TC-2479)
Date Published November 1996 N
Printed in Japan
©
1994