2SC5181 Datasheet, PDF (1/8 Pages) NEC – NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

DATA SHEET
SILICON TRANSISTOR
2SC5181
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
• Low current consumption and high gain
|S21e|² = 10.5 dBTYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz
|S21e|² = 9.0 dBTYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz
• Ultra Super Mini-Mold package
ORDERING INFORMATION
PART
NUMBER
2SC5181
2SC5181-T1
QUANTITY
ARRANGEMENT
50 units/box
Embossed tape, 8 mm wide, pin No. 3
3 000 units/reel ^{(collector) facing the perforation}
* Contact your NEC sales representatives to order samples for
evaluation (available in batches of 50).
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage VCBO
5
V
Collector to Emitter Voltage VCEO
3
V
Emitter to Base Voltage
VEBO
2
V
Collector Current
IC
10
mA
Total Power Dissipation
PT
30
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
–65 to +150
°C
PACKAGE DIMENSIONS
(Units: mm)
1.6 ± 0.1
0.8 ± 0.1
2
3
1
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
Document No. P12105EJ2V0DS00 (2nd edition)
(Previous No. TC-2478)
Date Published November 1996 N
Printed in Japan
©
1994