2SC5180 Datasheet, PDF (1/8 Pages) NEC – NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

DATA SHEET
SILICON TRANSISTOR
2SC5180
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
• Low current consumption and high gain
S21e ² = 12 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz
S21e ² = 11 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
• Supper Mini-Mold package
ORDERING INFORMATION
PART
NUMBER
QUANTITY
2SC5180–T1
3 000 units/reel
2SC5180–T2
ARRANGEMENT
Embossed tape, 8 mm wide, pins No. 3
(base) and No. 4 (emitter) facing the
perforations
Embossed tape, 8 mm wide, pins No. 1
(collector) and No. 2 (emitter) facing the
perforations
* Contact your NEC sales representatives to order samples for evaluation (available
in batches of 50).
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage
VCBO
5
V
Collector to Emitter Voltage
VCEO
3
V
Emitter to Base Voltage
VEBO
2
V
Collector Current
IC
10
mA
Total Power Dissipation
PT
30
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
–65 to +150
°C
PACKAGE DIMENSIONS
(Units : mm)
2.1 ± 0.2
1.25 ± 0.1
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
Caution;
This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
Document No. P12104EJ2V0DS00 (2nd edition)
(Previous No. TC-2477)
Date Published December 1996 N
Printed in Japan
©
1994