2SC5179 Datasheet, PDF (1/12 Pages) NEC – NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

DATA SHEET
SILICON TRANSISTOR
2SC5179
NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
• Low current consumption and high gain
|S21e|² = 9 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz
|S21e|² = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
• Small Mini-Mold package
EIAJ: SC-70
ORDERING INFORMATION
PART
NUMBER
2SC5179-T1
2SC5179-T2
QUANTITY
3000 units/reel
ARRANGEMENT
Embossed tape, 8 mm wide, pin
No. 3 (Collector) facing
the perforations
Embossed tape, 8 mm wide, pins
No. 1 (Emitter) and No. 2 (Base)
facing the perforations
* Contact your NEC sales representatives to order samples for
evaluation (available in batches of 50).
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage
VCBO
5
V
Collector to Emitter Voltage VCEO
3
V
Emitter to Base Voltage
VEBO
2
V
Collector Current
IC
10
mA
Total Power Dissipation
PT
30
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
–65 to +150
°C
PACKAGE DIMENSIONS
(Units: mm)
2.1±0.1
1.25±0.1
2
1
3
Marking
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
CAUTION; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
Document No. P12103EJ2V0DS00 (2nd edition)
(Previous No. TC-2476)
Date Published November 1996 N
Printed in Japan
©
1994