2SC5177 Datasheet, PDF (1/12 Pages) NEC – NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

DATA SHEET
SILICON TRANSISTOR
2SC5177
NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
• Low Current Consumption and High Gain
|S21e|² = 9.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz
|S21e|² = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
• Mini-Mold package
EIAJ: SC-59
ORDERING INFORMATION
PART
NUMBER
2SC5177-T1
2SC5177-T2
QUANTITY
ARRANGEMENT
3 000 units/reel
3 000 units/reel
Embossed tape, 8 mm wide, pin
No. 3 (collector) facing the
perforations
Embossed tape, 8 mm wide, pins
No. 1 (emitter) and No. 2 (base)
facing the perforations
Remark Contact your NEC sales representatives to order samples
for evaluation (available in batches of 50).
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage
VCBO
5
V
Collector to Emitter Voltage VCEO
3
V
Emitter to Base Voltage
VEBO
2
V
Collector Current
IC
10
mA
Total Power Dissipation
PT
30
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
–65 to +150
°C
PACKAGE DIMENSIONS
(Units: mm)
2.8±0.2
1.5
0.65
+0.1
–0.15
2
1
3
Marking
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
CAUTION; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
Document No. P12101EJ2V0DS00 (2nd edition)
(Previous No. TC-2474)
Date Published November 1996 N
Printed in Japan
©
1994