2SC5014 Datasheet, PDF (1/8 Pages) NEC – HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

DATA SHEET
SILICON TRANSISTOR
2SC5014
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS SUPER MINI MOLD
FEATURES
• Small Package
• High Gain Bandwidth Product (fT = 12 GHz TYP.)
• Low Noise, High Gain
• Low Voltage Operation
ORDERING INFORMATION
PART
NUMBER
2SC5014-T1
2SC5014-T2
QUANTITY
3 Kpcs/Reel.
3 Kpcs/Reel.
PACKING STYLE
Embossed tape 8 mm wide.
Pin3 (Base), Pin4 (Emitter) face to
perforation side of the tape.
Embossed tape 8 mm wide.
Pin1 (Collector), Pin2 (Emitter) face
to perforation side of the tape.
* Please contact with responsible NEC person, if you require
evaluation sample. Unit sample quantity shall be 50 pcs.
(Part No.: 2SC5014)
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage
VCBO
9
V
Collector to Emitter Voltage
VCEO
6
V
Emitter to Base Voltage
VEBO
2
V
Collector Current
IC
10
mA
Total Power Dissipation
PT
60
mW
Junction Temperature
Tj
150
˚C
Storage Temperature
Tstg
–65 to +150 ˚C
PACKAGE DIMENSIONS
in millimeters
2.1 ± 0.2
1.25 ± 0.1
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
Caution; Electrostatic Sensitive Device.
Document No. P10393EJ2V0DS00 (2nd edition)
(Previous No. TD-2414)
Date Published August 1995 P
Printed in Japan
©
1993