2SC5010 Datasheet, PDF (1/10 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DATA SHEET
SILICON TRANSISTOR
2SC5010
NPN SILICON EPITAXIAL TRANSISTOR
3 PINS ULTRA SUPER MINI MOLD
DESCRIPTION
The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from
VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and
excellent linearity. This is achieved by direct nitride passivated base surface process (NEST3 process) which is an
NEC proprietary fabrication technique.
FEATURES
• Low Voltage Use.
• High fT : 12.0 GHz TYP. (@ VCE = 3 V, IC = 10 mA, f = 2 GHz)
• Low Cre : 0.4 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz)
• Low NF : 1.5 dB TYP. (@ VCE = 3 V, IC = 3 mA, f = 2 GHz)
• High |S21e|² : 8.5 dB TYP. (@ VCE = 3 V, IC = 10 mA, f = 2 GHz)
• Ultra Super Mini Mold Package.
PACKAGE DIMENSIONS
in milimeters
1.6 ± 0.1
0.8 ± 0.1
2
ORDERING INFORMATION
PART
NUMBER
2SC5010
2SC5010-T1
QUANTITY
50 pcs/Unit.
3 kpcs/Reel.
PACKING STYLE
Embossed tape 8 mm wide.
Pin3(Collector) face to perforation side
of the tape.
3
1
* Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage
VCBO
9
V
Collector to Emitter Voltage
VCEO
6
V
Emitter to Base Voltage
VEBO
2
V
Collector Current
IC
30
mA
Total Power Dissipation
PT
125
mW
Junction Temperature
Tj
150
˚C
Storage Temperature
Tstg
–65 to +150 ˚C
1. Emitter
2. Base
3. Collector
Document No. P10389EJ2V0DS00 (2nd edition)
(Previous No. TD-2401)
Date Published July 1995 P
Printed in Japan
©
1993